Invention Application
- Patent Title: SEMICONDUCTOR CIRCUIT ELEMENT
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Application No.: US15426728Application Date: 2017-02-07
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Publication No.: US20170148919A1Publication Date: 2017-05-25
- Inventor: Peter Baars , Carsten Grass
- Applicant: GLOBALFOUNDRIES Inc.
- Priority: DE102014221371.1 20141021
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L21/28 ; H01L29/66 ; H01L27/1159 ; H01L27/092 ; H01L21/8238
Abstract:
A semiconductor circuit element includes a first semiconductor device positioned in and above a first active region of a semiconductor substrate and a second semiconductor device positioned in and above a second active region of the semiconductor substrate. The first semiconductor device includes a first gate structure having a first gate dielectric layer that includes a first high-k material, and the second semiconductor device includes a second gate structure having a second gate dielectric layer that includes a ferroelectric material that is different from the first high-k material.
Public/Granted literature
- US10079300B2 Semiconductor circuit element Public/Granted day:2018-09-18
Information query
IPC分类:
