Invention Application
- Patent Title: PERFORMANCE MATCHING IN THREE-DIMENSIONAL (3D) INTEGRATED CIRCUIT (IC) USING BACK-BIAS COMPENSATION
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Application No.: US15270598Application Date: 2016-09-20
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Publication No.: US20180082007A1Publication Date: 2018-03-22
- Inventor: Sudeep Mandal , Jeanne P. Bickford
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Various embodiments include approaches for designing three-dimensional (3D) integrated circuits (ICs). In one embodiment, a system is configured to: read an electronic chip identification (ECID) for a plurality of dies formed from distinct wafer lots, the ECID indicating a process performance parameter for each distinct wafer lot; create a reference table mapping a back-bias voltage to be applied to each die to the process performance parameter for each distinct wafer lot; determine performance requirements of a customer design for the 3D IC structure; assemble the design of the 3D IC structure including a set of dies selected from at least two of the distinct wafer lots; and assign a back bias voltage to each die based upon the performance requirements of the customer design and the reference table.
Public/Granted literature
- US10013519B2 Performance matching in three-dimensional (3D) integrated circuit (IC) using back-bias compensation Public/Granted day:2018-07-03
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