Invention Application
- Patent Title: GROUNDING TECHNIQUES FOR BACKSIDE-BIASED SEMICONDUCTOR DICE AND RELATED DEVICES, SYSTEMS AND METHODS
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Application No.: US15891775Application Date: 2018-02-08
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Publication No.: US20180233463A1Publication Date: 2018-08-16
- Inventor: Behrooz Mehr , Fernando Chen , Emmanuel de los Santos , Alex Kungo
- Applicant: Behrooz Mehr , Fernando Chen , Emmanuel de los Santos , Alex Kungo
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L25/065 ; H01L21/48 ; H01L25/00

Abstract:
Semiconductor devices may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Methods of making semiconductor devices may involve supporting a backside-biased semiconductor die supported above a substrate, a backside surface of the backside-biased semiconductor die being spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Systems may include a sensor device, a nontransitory memory device, and at least one semiconductor device operatively connected thereto. The at least one semiconductor device may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be electrically connected to ground by wire bonds extending to the substrate.
Public/Granted literature
- US10741507B2 Grounding techniques for backside-biased semiconductor dice and related devices, systems and methods Public/Granted day:2020-08-11
Information query
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