Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US16194379Application Date: 2018-11-18
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Publication No.: US20200127089A1Publication Date: 2020-04-23
- Inventor: Te-Chang Hsu , Che-Hsien Lin , Cheng-Yeh Huang , Chun-Jen Huang , Yu-Chih Su , Yao-Jhan Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@22a3d98a
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/768 ; H01L21/311 ; H01L21/3213
Abstract:
A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.
Public/Granted literature
- US10700163B2 Semiconductor device including conductive structure and manufacturing method thereof Public/Granted day:2020-06-30
Information query
IPC分类:
