A method of forming sublithographic features. The method comprises forming a pattern of lines at a first pitch, the lines comprising horizontal portions and sloped portions. A spacer material is formed adjacent to the lines and portions of the spacer material are removed to form spacers on the lines, the spacers comprising a second pitch. The lines are removed. A sloped profile of the lines prevents the formation of loops of the spacer material, enabling the formation of sublithographic features without using a chop mask or chop mask process acts. Additional methods are disclosed.