Invention Application
- Patent Title: Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method
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Application No.: US16792267Application Date: 2020-02-16
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Publication No.: US20200183290A1Publication Date: 2020-06-11
- Inventor: Gonzalo Roberto SANGUINETTI , Murat BOZKURT , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@261e6e09
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G01B11/27

Abstract:
Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
Public/Granted literature
- US10859923B2 Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method Public/Granted day:2020-12-08
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