Invention Application
- Patent Title: MANGANESE-DOPED InZnP QUANTUM DOT AND MANUFACTURING METHOD THEREOF
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Application No.: US16720557Application Date: 2019-12-19
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Publication No.: US20200291293A1Publication Date: 2020-09-17
- Inventor: Chuljong HAN , Jiyong KIM , Kyoungwon PARK
- Applicant: Korea Electronics Technology Institute
- Applicant Address: KR Seongnam-si
- Assignee: Korea Electronics Technology Institute
- Current Assignee: Korea Electronics Technology Institute
- Current Assignee Address: KR Seongnam-si
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1b49c3fc
- Main IPC: C09K11/70
- IPC: C09K11/70 ; C09K11/08

Abstract:
The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by synthesizing an InZnP quantum dot by reacting indium acetate, zinc acetate, and tris(trimethylsilyl)phosphine; and then doping the InZnP quantum dot with manganese.
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