Invention Application
- Patent Title: IMAGE SENSOR HAVING REDUCED PARASITIC CAPACITANCE
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Application No.: US16890422Application Date: 2020-06-02
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Publication No.: US20210120200A1Publication Date: 2021-04-22
- Inventor: Sunyool Kang , Yongjun Cho , Yunhwan Jung , Heesung Chae , Kyungmin Kim , Haesick Sul , Sukki Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0128980 20191017
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; H01L27/146

Abstract:
An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.
Public/Granted literature
- US11606523B2 Image sensor having reduced parasitic capacitance Public/Granted day:2023-03-14
Information query
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