Invention Application
- Patent Title: SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM
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Application No.: US17384023Application Date: 2021-07-23
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Publication No.: US20220028792A1Publication Date: 2022-01-27
- Inventor: Youngjae KANG , SangWoon LEE , Joungeun YOO , Duseop YOON
- Applicant: Samsung Electronics Co., Ltd. , AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Applicant Address: KR Suwon-si; KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee: Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee Address: KR Suwon-si; KR Suwon-si
- Priority: KR10-2020-0093380 20200727,KR10-2021-0034244 20210316
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/528 ; H01L29/45 ; H01L21/285
Abstract:
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm: Mn+1AXn Formula 1 In Formula 1, M, A, X, and n are as described in the specification.
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