A method is described for method for patterning a metal layer interfaced with a transparent conductive film, in which the method comprises contacting a structure through a patterned mask with an etching solution comprising Fe+3 ions, wherein the structure comprises the metal layer comprising copper, nickel, aluminum or alloys thereof covering at least partially a transparent conductive film with conductive elements comprising silver, to expose a portion of the transparent conductive film. Etching solutions and the etched structures are also described.