Invention Application
- Patent Title: METHOD FOR MEASURING FILM THICKNESS DISTRIBUTION OF WAFER WITH THIN FILMS
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Application No.: US17762859Application Date: 2020-09-16
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Publication No.: US20220341728A1Publication Date: 2022-10-27
- Inventor: Susumu KUWABARA , Kevin QUINQUINET , Philippe GASTALDO
- Applicant: SHIN-ETSU HANDOTAI CO., LTD. , UNITY SEMICONDUCTOR
- Applicant Address: JP Tokyo; FR Montbonnot-Saint-Martin
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.,UNITY SEMICONDUCTOR
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.,UNITY SEMICONDUCTOR
- Current Assignee Address: JP Tokyo; FR Montbonnot-Saint-Martin
- Priority: JP2019-182831 20191003
- International Application: PCT/JP2020/035018 WO 20200916
- Main IPC: G01B11/06
- IPC: G01B11/06

Abstract:
A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength λ0 to adjust the focus; determining a wavelength λ1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength λ1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ΔZ between Z1 and Z2; correcting the autofocus function with ΔZ as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.
Public/Granted literature
- US11965730B2 Method for measuring film thickness distribution of wafer with thin films Public/Granted day:2024-04-23
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