Invention Application
- Patent Title: HIGHLY-INTEGRATED COMPACT DIFFRACTION-GRATING BASED SEMICONDUCTOR LASER
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Application No.: US17733104Application Date: 2022-04-29
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Publication No.: US20220352685A1Publication Date: 2022-11-03
- Inventor: Yingyan Huang
- Applicant: OptoNet Inc.
- Applicant Address: US IL Evanston
- Assignee: OptoNet Inc.
- Current Assignee: OptoNet Inc.
- Current Assignee Address: US IL Evanston
- Main IPC: H01S3/063
- IPC: H01S3/063 ; H01S5/0234 ; H01S5/343 ; H01S3/08 ; H01S3/04 ; B29D11/00

Abstract:
It is an aim of the present invention to provide ultra-compact highly-integrated diffraction-grating semiconductor lasers on chips. Various embodiments combined enable the lasers to be compact in size, light weight, mechanically rugged, low in manufacturing cost, and in some cases high in electrical wall-plugged power efficiency or high in optical power output, comparing to typical lasers based on discrete optical components.
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