Invention Application
- Patent Title: AVALANCHE PHOTODETECTORS AND IMAGE SENSORS INCLUDING THE SAME
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Application No.: US17857466Application Date: 2022-07-05
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Publication No.: US20220367745A1Publication Date: 2022-11-17
- Inventor: Sanghyun JO , Jaeho LEE , Haeryong KIM , Hyeonjin SHIN
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2017-0157506 20171123
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/02 ; H01L31/0224 ; H01L31/0352 ; H01S5/0687 ; G01S7/481 ; H01L31/028 ; H01L31/032 ; H01L27/146 ; H01L31/101 ; H01L27/30 ; G01S17/931

Abstract:
A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.
Public/Granted literature
- US11721781B2 Avalanche photodetectors and image sensors including the same Public/Granted day:2023-08-08
Information query
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