A method for cleaning a semiconductor wafer to clean a semiconductor wafer after polishing, including: performing a first ozone-water treatment step of cleaning the polished semiconductor wafer with ozone water to form an oxide film; performing a brush cleaning step of brush-cleaning the semiconductor wafer with carbonated water after the first ozone-water treatment step; and then performing a second ozone-water treatment step including cleaning the semiconductor wafer with hydrofluoric acid to remove the oxide film, followed by cleaning with ozone water to form an oxide film again. This second ozone-water treatment step is performed one or more times. The method for cleaning a semiconductor wafer achieves cleaning level equivalent to that with SC1, reduces or prevents defect generation on a wafer surface and surface roughness degradation which would otherwise occur when SC1 is used, and also results in cost reduction and environmental load reduction.