Invention Publication
- Patent Title: SEMICONDUCTOR CHIP AND METHOD OF FABRICATING THE SAME
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Application No.: US17851170Application Date: 2022-06-28
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Publication No.: US20230178484A1Publication Date: 2023-06-08
- Inventor: Donghwa LEE
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20210170933 2021.12.02
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/544 ; H01L21/768 ; G11C17/16

Abstract:
Disclosed is a method of designing and fabricating a semiconductor chip including a fuse cell. The method may include preparing a semiconductor chip layout, the semiconductor chip layout including a main chip layout and a scribe lane layout enclosing the main chip layout; disposing a fuse layout in the scribe lane layout; setting the main chip layout as a first data preparation region; setting the scribe lane layout and the fuse layout as a second data preparation region; obtaining a first resulting structure and a second resulting structure, respectively, by performing a data preparation process on the first and second data preparation regions; merging the first and second resulting structures to generate mask data; manufacturing a photomask, based on the mask data; and forming semiconductor chips on a wafer using the photomask.
Information query
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