Invention Publication
- Patent Title: METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK BY SURFACE ACTIVATION
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Application No.: US18104456Application Date: 2023-02-01
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Publication No.: US20230178512A1Publication Date: 2023-06-08
- Inventor: Alfred Sigl , Alexander Frey
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: EP 205462.3 2020.11.03
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/18 ; H01L25/065

Abstract:
A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.
Public/Granted literature
- US11948912B2 Method of manufacturing a bonded substrate stack by surface activation Public/Granted day:2024-04-02
Information query
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