Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
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Application No.: US17543914Application Date: 2021-12-07
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Publication No.: US20230178608A1Publication Date: 2023-06-08
- Inventor: JHEN-YU TSAI
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW NEW TAIPEI CITY
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW NEW TAIPEI CITY
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a surface. The surface has a first portion and a second portion protruding from the first portion. The semiconductor device also includes a dielectric layer disposed on the second portion and a gate conductive layer disposed on the dielectric layer.
Public/Granted literature
- US11894427B2 Semiconductor device, and method for manufacturing the same Public/Granted day:2024-02-06
Information query
IPC分类:
