Invention Publication
- Patent Title: NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
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Application No.: US18167354Application Date: 2023-02-10
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Publication No.: US20230189673A1Publication Date: 2023-06-15
- Inventor: Minhyun LEE , Houk JANG , Donhee HAM , Chengye LIU , Henry Julian HINTON , Haeryong KIM , Hyeonjin SHIN
- Applicant: Samsung Electronics Co., Ltd. , President and Fellows Of Harvard College
- Applicant Address: KR MA Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,President and Fellows Of Harvard College
- Current Assignee: Samsung Electronics Co., Ltd.,President and Fellows Of Harvard College
- Current Assignee Address: KR Suwon-si; US MA Cambridge
- Priority: KR 20200010030 2020.01.28
- Main IPC: H10N70/00
- IPC: H10N70/00 ; H10B63/00
Abstract:
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
Public/Granted literature
- US12268106B2 Nonvolatile memory device and operating method of the same Public/Granted day:2025-04-01
Information query
