Invention Application
- Patent Title: HYBRID SEMICONDUCTOR DEVICE
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Application No.: US18066511Application Date: 2022-12-15
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Publication No.: US20230115019A1Publication Date: 2023-04-13
- Inventor: Christopher Boguslaw KOCON , Henry Litzmann EDWARDS
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/417 ; H01L29/45 ; H01L29/16 ; H01L29/20 ; H01L29/66 ; H01L29/06
Abstract:
A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.
Information query
IPC分类:
