Invention Application
- Patent Title: METHODS FOR THERMAL TREATMENT OF A SEMICONDUCTOR LAYER IN SEMICONDUCTOR DEVICE
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Application No.: US17539677Application Date: 2021-12-01
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Publication No.: US20230138575A1Publication Date: 2023-05-04
- Inventor: Kun ZHANG , Lei LIU , Yuancheng YANG , Wenxi ZHOU , Zhiliang XIA
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67
Abstract:
Methods for thermal treatment on a semiconductor device is disclosed. One method includes obtaining a pattern of a treatment area having amorphous silicon, aligning a laser beam with the treatment area, the laser beam in a focused laser spot having a spot area equal to or greater than the treatment area, and performing a laser anneal on the treatment area by emitting the laser beam towards the treatment area for a treatment period.
Information query
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