Invention Publication
- Patent Title: SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
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Application No.: US18479431Application Date: 2023-10-02
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Publication No.: US20240038751A1Publication Date: 2024-02-01
- Inventor: Nam Jae LEE
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Priority: KR 20200097011 2020.08.03
- The original application number of the division: US17166711 2021.02.03
- Main IPC: H01L25/18
- IPC: H01L25/18 ; G11C16/24 ; G11C16/08 ; H01L23/00 ; H10B41/10 ; H10B41/27 ; H10B41/35 ; H10B41/41 ; H10B43/10 ; H10B43/27 ; H10B43/35 ; H10B43/40

Abstract:
A semiconductor device includes: a substrate extending in a first direction and a second direction intersecting with the first direction; a plurality of input/output pads disposed at one side of the substrate; a first circuit adjacent to the input/output pads in the first direction; a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit; a first memory cell array overlapping the first circuit; a second memory cell array overlapping the second circuit; first metal source patterns overlapping the first memory cell array and being spaced apart from each other in the second direction; and a second metal source pattern overlapping the second memory cell array and formed to have a width wider than a width of each of the first metal source patterns in the second direction.
Public/Granted literature
- US12087753B2 Semiconductor memory device and manufacturing method of semiconductor memory device Public/Granted day:2024-09-10
Information query
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