Invention Publication
- Patent Title: METHOD FOR PUF GENERATION USING VARIATIONS IN TRANSISTOR THRESHOLD VOLTAGE AND SUBTHRESHOLD LEAKAGE CURRENT
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Application No.: US18139875Application Date: 2023-04-26
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Publication No.: US20240079257A1Publication Date: 2024-03-07
- Inventor: Shih-Lien Linus LU , Cormac Michael O'CONNELL
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu City
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu City
- The original application number of the division: US15965429 2018.04.27
- Main IPC: H01L21/68
- IPC: H01L21/68 ; B25J9/16 ; H01L21/67 ; H01L21/673

Abstract:
Disclosed is a physical unclonable function generator circuit and method. In one embodiment, a physical unclonable function (PUF) generator comprising: a plurality of PUF cells, wherein each of the plurality of PUF cells comprises a first MOS transistor and a second MOS transistor, wherein terminal S of the first MOS transistor is connected to terminal D of the second MOS transistor at a dynamic node, terminal D of the first MOS transistor is coupled to a first bus and terminal G of the first NMOS transistor is coupled to a second bus, and terminals S and G of the second NMOS transistor are coupled to ground; a plurality of dynamic flip-flop (DFF) circuits wherein each of the plurality of DFF circuits is coupled to each of the plurality of PUF cells respectively; a population count circuit coupled to the plurality of DFF circuits; and an evaluation logic circuit having an input coupled to the population count circuit and an output coupled to the plurality of DFF circuits.
Public/Granted literature
- US12080581B2 Method for PUF generation using variations in transistor threshold voltage and subthreshold leakage current Public/Granted day:2024-09-03
Information query
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