Invention Publication
- Patent Title: MEMORY CONTROL CIRCUIT AND REFRESH METHOD FOR DYNAMIC RANDOM ACCESS MEMORY ARRAY
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Application No.: US17944162Application Date: 2022-09-13
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Publication No.: US20240087635A1Publication Date: 2024-03-14
- Inventor: Shu-Wei Yang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei City
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei City
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408

Abstract:
A memory control circuit and a refresh method for a dynamic random access memory (DRAM) array are provided. The memory control circuit includes a mode register circuit, a command decoder and a refresh circuit. The mode register circuit includes a plurality of mode registers. The command decoder receives a refresh command and sets a flag of a target mode register corresponding to the refresh command among the plurality of mode registers to a setting value. The refresh circuit refreshes the DRAM array in response to the refresh command through the command decoder and the setting value of the flag of the target mode register.
Public/Granted literature
- US12142312B2 Memory control circuit and refresh method for dynamic random access memory array Public/Granted day:2024-11-12
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