Method for fabricating a microchip are provided which may comprise forming a dopant mask layer on a front side surface of a silicon substrate having the front side surface and an opposing back side surface; removing a portion of the dopant mask layer according to a pattern to form a first exposed silicon region in the silicon substrate and a first unexposed silicon region in the silicon substrate; doping the first exposed silicon region in the silicon substrate with a p-type dopant to form a first p-type doped silicon region in the silicon substrate; forming a silicon nitride layer on the front side surface of the silicon substrate comprising the first p-type doped silicon region and the first unexposed silicon region; and forming an opening in the silicon substrate from the opposing back side surface of the silicon substrate to provide a microchip comprising the silicon substrate having the opening, a first silicon nitride window positioned within the opening, and a support structure mounted to the first silicon nitride window, the support structure comprising the first p-type doped silicon region. The fabricated microchips and methods of using the microchips are also provided.