Invention Publication
- Patent Title: Silicon-Based Vacuum Transistors and Integrated Circuits
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Application No.: US18242185Application Date: 2023-09-05
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Publication No.: US20240186097A1Publication Date: 2024-06-06
- Inventor: Saeed MOHAMMADI , Shabnam GHOTBI
- Applicant: Purdue Research Foundation
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Main IPC: H01J21/20
- IPC: H01J21/20
Abstract:
A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.
Public/Granted literature
- US12080506B2 Silicon-based vacuum transistors and integrated circuits Public/Granted day:2024-09-03
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