A semiconductor memory device includes a bit line on a substrate and extending in a first direction parallel to a bottom surface of the substrate, a first active pattern on the bit line, a first word line intersecting the first active pattern in a second direction which is parallel to the bottom surface of the substrate and intersects the first direction, and a first conductive pattern on the first active pattern. The first word line includes a first side surface facing the first direction. The first active pattern includes a first portion between the first word line and the first conductive pattern, a second portion between the first word line and the bit line, and a third portion extending on the first side surface of the first word line to connect the first portion to the second portion of the first active pattern.