A semiconductor device includes a semiconductor die, a chip guard ring, a first crack detection structure, a second crack detection structure and a detection controller. The semiconductor die includes a central region in which a semiconductor integrated circuit is arranged and an external region surrounding the central region. The semiconductor device may accelerate a progress of a crack occurring around the first crack detection structure by applying a first power and a second power having a voltage level difference to the first crack detection structure and the second crack detection structure, respectively, in a first phase, may apply a test input signal to the first crack detection structure in a second phase and may determine whether a progressive crack occurs in the central region based on whether a test output signal responding to the test input signal is detected in the second crack detection structure, in the second phase.