Invention Application
- Patent Title: PHOTORESIST PATTERNING PROCESS
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Application No.: US18792284Application Date: 2024-08-01
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Publication No.: US20240393695A1Publication Date: 2024-11-28
- Inventor: Huixiong DAI , Srinivas D. NEMANI , Steven Hiloong WELCH , Mangesh Ashok BANGAR , Ellie Y. YIEH
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/16 ; G03F7/38 ; H01L21/027 ; H01L21/266 ; H01L21/311
Abstract:
A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.
Information query
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