Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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Application No.: US18976256Application Date: 2024-12-10
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Publication No.: US20250107130A1Publication Date: 2025-03-27
- Inventor: Ming-Hua Chang , Po-Wen Su , Chih-Tung Yeh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110527145.7 20210514
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/311 ; H01L29/20 ; H01L29/66
Abstract:
A semiconductor structure includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a first passivation layer on the insulating layer, a contact structure disposed on the first passivation layer and extending through the first passivation layer to directly contact a portion of the barrier layer, and an insulating layer interposed between the barrier layer and the first passivation layer and comprising an extending portion protruding toward a bottom corner of the contact structure.
Information query
IPC分类:
