A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first outer conductivity region. The first outer conductivity region is of the same conductivity type as the n-type region but of a higher doping concentration. Contiguous to the p-type region is a second outer conductivity region. The second outer conductivity region is of the same conductivity type as the ptype region but of higher doping concentration. The p-type region and the n-type region are the active regions of the Trapatt diode and have a graded doping concentration. In addition, the active regions are in close proximity to a surface of the diode which is generally mounted in contact with a heat sink. The graded doping concentration and close proximity of the active regions to a heat sink results in a Trapatt diode with good thermal dissipation characteristics, increased power output, and a broader bandwidth.