Invention Grant
US5674792A Shaped body having a high silicon dioxide content and a process for
producing such shaped bodies
失效
具有高二氧化硅含量的成形体和用于制造这种成形体的方法
- Patent Title: Shaped body having a high silicon dioxide content and a process for producing such shaped bodies
- Patent Title (中): 具有高二氧化硅含量的成形体和用于制造这种成形体的方法
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Application No.: US636889Application Date: 1996-04-24
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Publication No.: US5674792APublication Date: 1997-10-07
- Inventor: Stephan Moritz , Wolfgang Englisch
- Applicant: Stephan Moritz , Wolfgang Englisch
- Applicant Address: DEX Hanau
- Assignee: Heraeus Quarzglas GmbH
- Current Assignee: Heraeus Quarzglas GmbH
- Current Assignee Address: DEX Hanau
- Priority: DEX4338807.8 19931112
- Main IPC: B22C9/12
- IPC: B22C9/12 ; C03B19/06 ; C03C3/06 ; C03C11/00 ; C30B35/00 ; C04B35/14
Abstract:
A shaped body of amorphous silicon dioxide, which has a chemical purity of at least 99.9% and a cristobalite content of at most 1% and which is impermeable to gas, is known. To provide shaped bodies of amorphous silicon dioxide which have a high precision, which can be small or large in size and of simple to complicated shape, which have a chemical purity of at least 99.9%, are impermeable to gas above wall thicknesses of 1 mm, which have a high cold flexural strength, low thermal conductivity and low radiation of heat, which are thermal shock resistant and can be exposed repeatedly or also long-term to temperatures in the range from 1000.degree. to 1300.degree. C. and which can be welded in a sharply delineated manner without spreading joins and which have a low spectral transmission from the ultraviolet to the middle infrared spectral region, the shaped body is opaque, contains pores, at a wall thickness of 1 mm has a direct spectral transmission which is virtually constant in the wavelength range from .lambda.=190 nm to .lambda.=2650 nm and is below 10%, and it has a density which is at least 2.15 g/cm.sup.3. A process for producing such shaped bodies is also provided.
Public/Granted literature
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