Invention Grant
US5918147A Process for forming a semiconductor device with an antireflective layer
失效
用于形成具有抗反射层的半导体器件的工艺
- Patent Title: Process for forming a semiconductor device with an antireflective layer
- Patent Title (中): 用于形成具有抗反射层的半导体器件的工艺
-
Application No.: US413021Application Date: 1995-03-29
-
Publication No.: US5918147APublication Date: 1999-06-29
- Inventor: Stanley M. Filipiak , Ted R. White , T. P. Ong , Jung-Hui Lin , Wayne M. Paulson , Bernard J. Roman
- Applicant: Stanley M. Filipiak , Ted R. White , T. P. Ong , Jung-Hui Lin , Wayne M. Paulson , Bernard J. Roman
- Applicant Address: IL Schaumburg
- Assignee: Motorola, Inc.
- Current Assignee: Motorola, Inc.
- Current Assignee Address: IL Schaumburg
- Main IPC: G03F7/11
- IPC: G03F7/11 ; H01L21/027 ; H01L21/285 ; H01L21/316 ; H01L21/318 ; H01L21/3213
Abstract:
Antireflective layers (54, 86, and 109) have been developed that have discrete portions (541, 542, 861, 862, 863, 1091, and 1092). The discrete portions (541, 542, 861, 862, 863, 1091, and 1092) allow the antireflective layers (54, 86, and 109) to be used in many instances where using a single layer of uniform composition would be difficult or impossible. Alternatively, a single antireflective layer with a continuously graded composition can be used.
Public/Granted literature
- US6120331A Connector assembly Public/Granted day:2000-09-19
Information query
IPC分类:
