Invention Grant
- Patent Title: Method for the formation of a planarizing coating film on substrate surface
- Patent Title (中): 在基板表面上形成平坦化涂膜的方法
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Application No.: US09765276Application Date: 2001-01-22
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Publication No.: US06297174B2Publication Date: 2001-10-02
- Inventor: Etsuko Iguchi , Takako Hirosaki , Masakazu Kobayashi
- Applicant: Etsuko Iguchi , Takako Hirosaki , Masakazu Kobayashi
- Priority: JP10-177524 19980624
- Main IPC: H01L2131
- IPC: H01L2131

Abstract:
A method is disclosed for the formation of a planarizing coating film on the surface of a substrate having a stepped level difference under processing for the manufacture of semiconductor devices. The inventive method capable of giving a planarizing coating film of excellent planarity and good adhesion to the substrate surface comprises the steps of: (a) coating the substrate surface with a coating solution containing, as a film-forming solute uniformly dissolved in an ,organic solvent, a nitrogen-containing organic compound such as benzoguanamine and melamine having, in a molecule, at least two amino and/or imino groups each substituted for the nitrogen-bonded hydrogen atom by a hydroxyalkyl group or an alkoxyalkyl group to form a coating layer; (b) drying the coating layer by evaporating the organic solvent to form a dried coating layer; and (c) subjecting the dried coating layer to a baking treatment at a temperature in the range from 150 to 250° C.
Public/Granted literature
- US20010003068A1 Method for the formation of a planarizing coating film on substrate surface Public/Granted day:2001-06-07
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