Invention Grant
- Patent Title: Flash anneal
- Patent Title (中): 闪光退火
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Application No.: US09910298Application Date: 2001-07-20
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Publication No.: US06376806B2Publication Date: 2002-04-23
- Inventor: Woo Sik Yoo
- Applicant: Woo Sik Yoo
- Main IPC: A21B100
- IPC: A21B100

Abstract:
A system for uniformly and controllably heating the active surface of a semiconductor wafer or substrate during processing. The present invention may include a radiation energy source provided, which is enclosed or substantially surrounded by a reflective/absorptive surface, which both reflects and absorbs the radiation, emitted from the energy source. In accordance with the present invention, the resultant energy output as seen by the wafer is substantially free of non-uniformity.
Public/Granted literature
- US20010047990A1 Flash anneal Public/Granted day:2001-12-06
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