Invention Grant
- Patent Title: Power mosfet with integrated drivers in a common package
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Application No.: US10138130Application Date: 2002-05-02
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Publication No.: US06593622B2Publication Date: 2003-07-15
- Inventor: Daniel M. Kinzer , Tim Sammon , Mark Pavier , Adam I. Amali
- Applicant: Daniel M. Kinzer , Tim Sammon , Mark Pavier , Adam I. Amali
- Main IPC: H01L2976
- IPC: H01L2976

Abstract:
A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
Public/Granted literature
- US20020163040A1 Power mosfet with integrated drivers in a common package Public/Granted day:2002-11-07
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