Invention Grant
- Patent Title: Plasma gereration apparatus and method
- Patent Title (中): 等离子体发生装置和方法
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Application No.: US09767513Application Date: 2001-01-23
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Publication No.: US06633132B2Publication Date: 2003-10-14
- Inventor: Woo Sik Yoo
- Applicant: Woo Sik Yoo
- Main IPC: H05H100
- IPC: H05H100

Abstract:
An apparatus and process for processing a substrate using components and particles formed in a remote plasma generation section of a processing chamber. The processing chamber includes a processing section and a plasma generation section. A plasma field is generated in the plasma generation section, such that the plasma field is generated remotely from the processing section. Components and particles from the plasma field can diffuse and/or drift from the plasma generation section through a passageway to the processing section. The processing chamber may include a plurality of plasma generation sections for generating additional plasma fields. In each instance, the additional plasma fields are generated remotely from the processing section.
Public/Granted literature
- US20020096998A1 Plasma generation apparatus and method Public/Granted day:2002-07-25
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