Invention Grant
- Patent Title: Nitride semiconductor laser device and method for manufacturing the same
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Application No.: US10109721Application Date: 2002-04-01
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Publication No.: US06647042B2Publication Date: 2003-11-11
- Inventor: Mamoru Miyachi , Hiroyuki Ota
- Applicant: Mamoru Miyachi , Hiroyuki Ota
- Priority: JP2001-103068 20010402
- Main IPC: H01S500
- IPC: H01S500
Abstract:
A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.
Public/Granted literature
- US20020142503A1 Nitride semiconductor laser device and method for manufacturing the same Public/Granted day:2002-10-03
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