Invention Grant
- Patent Title: Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same
- Patent Title (中): 红外线检测元件,红外二维图像传感器及其制造方法
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Application No.: US10251953Application Date: 2002-09-23
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Publication No.: US06674081B2Publication Date: 2004-01-06
- Inventor: Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
- Applicant: Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Minoru Noda , Masanori Okuyama
- Priority: JP2000-164689 20000601
- Main IPC: G01J500
- IPC: G01J500

Abstract:
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
Public/Granted literature
- US20030066967A1 Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same Public/Granted day:2003-04-10
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