Invention Grant
- Patent Title: Method of manufacturing structure with pores and structure with pores
- Patent Title (中): 具有毛孔和结构孔的结构的制造方法
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Application No.: US09895464Application Date: 2001-07-02
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Publication No.: US06737668B2Publication Date: 2004-05-18
- Inventor: Tohru Den , Tatsuya Iwasaki
- Applicant: Tohru Den , Tatsuya Iwasaki
- Priority: JP2000-201366 20000703
- Main IPC: H01L2906
- IPC: H01L2906

Abstract:
A method of manufacturing a structure with pores which are formed by anodic oxidation and whose layout, pitch, position, direction, shape and the like can be controlled. The method includes the steps of: disposing a lamination film on a substrate, the lamination film being made of insulating layers and a layer to be anodically oxidized and containing aluminum as a main composition; and performing anodic oxidation starting from an end surface of the lamination film to form a plurality of pores having an axis substantially parallel to a surface of the substrate, wherein the layer to be anodically oxidized is sandwiched between the insulating layers, and a projected pattern substantially parallel to the axis of the pore is formed on at least one of the insulating layers at positions between the pores.
Public/Granted literature
- US20020014621A1 Method of manufactruing structure with pores and structure with pores Public/Granted day:2002-02-07
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