Invention Grant
- Patent Title: Ion beam apparatus and sample processing method
- Patent Title (中): 离子束装置和样品处理方法
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Application No.: US09794828Application Date: 2001-02-27
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Publication No.: US06822245B2Publication Date: 2004-11-23
- Inventor: Hiroyuki Muto , Tohru Ishitani , Yuichi Madokoro
- Applicant: Hiroyuki Muto , Tohru Ishitani , Yuichi Madokoro
- Priority: JP2000-217096 20000718
- Main IPC: G21K510
- IPC: G21K510

Abstract:
For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.
Public/Granted literature
- US20020008208A1 Ion beam apparatus and sample processing method Public/Granted day:2002-01-24
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