Invention Grant
- Patent Title: Method and apparatus for full surface electrotreating of a wafer
- Patent Title (中): 用于晶片全表面电镀的方法和装置
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Application No.: US10265460Application Date: 2002-10-03
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Publication No.: US06852208B2Publication Date: 2005-02-08
- Inventor: Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
- Applicant: Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
- Applicant Address: US CA Milpitas
- Assignee: NuTool, Inc.
- Current Assignee: NuTool, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: NuTool Legal Department
- Main IPC: C25D7/12
- IPC: C25D7/12 ; C25F7/00 ; C25D5/00

Abstract:
Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
Public/Granted literature
- US20030029731A1 Method and apparatus for full surface electrotreating of a wafer Public/Granted day:2003-02-13
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