Invention Grant
- Patent Title: Method of forming a beam for a MEMS switch
- Patent Title (中): 形成MEMS开关的光束的方法
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Application No.: US10342778Application Date: 2003-01-15
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Publication No.: US06880235B2Publication Date: 2005-04-19
- Inventor: Qing Ma
- Applicant: Qing Ma
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman, Lundberg, Woessner & Kluth, P.A.
- Main IPC: B81B3/00
- IPC: B81B3/00 ; H01H1/20 ; H01H59/00 ; H01H11/00 ; H01H11/02 ; H01H11/04 ; H01H65/00

Abstract:
A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.
Public/Granted literature
- US20030132824A1 High-speed MEMS switch with high-resonance-frequency beam Public/Granted day:2003-07-17
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