Invention Grant
US06914828B2 Semiconductor memory device with structure of converting parallel data into serial data
有权
具有将并行数据转换为串行数据的结构的半导体存储器件
- Patent Title: Semiconductor memory device with structure of converting parallel data into serial data
- Patent Title (中): 具有将并行数据转换为串行数据的结构的半导体存储器件
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Application No.: US10440188Application Date: 2003-05-19
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Publication No.: US06914828B2Publication Date: 2005-07-05
- Inventor: Takashi Kono
- Applicant: Takashi Kono
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2002-330982 20021114
- Main IPC: G11C11/407
- IPC: G11C11/407 ; G11C7/10 ; G11C11/34 ; G11C11/40 ; G11C11/408 ; G11C11/409 ; G11C19/00 ; H01L27/148

Abstract:
An amplifier circuit (R/A) conducts the first stage of ordering of whether to output data of four data bus pairs at the first half (first or second) or at the last half (third or fourth) based on the value of a signal EZORG1 reflecting the value of the least significant second bit of an externally applied column address. A switch circuit conducts the second stage of ordering to determine which is to be the first and the second of the two data output as the first half and to determine which is to be the third and the fourth of the two data output as the last half based on the value of a signal EZORG0 reflecting the value of the least significant bit in the externally applied column address.
Public/Granted literature
- US20040094780A1 Semiconductor memory device with structure of converting parallel data into serial data Public/Granted day:2004-05-20
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