Invention Grant
US06914828B2 Semiconductor memory device with structure of converting parallel data into serial data 有权
具有将并行数据转换为串行数据的结构的半导体存储器件

Semiconductor memory device with structure of converting parallel data into serial data
Abstract:
An amplifier circuit (R/A) conducts the first stage of ordering of whether to output data of four data bus pairs at the first half (first or second) or at the last half (third or fourth) based on the value of a signal EZORG1 reflecting the value of the least significant second bit of an externally applied column address. A switch circuit conducts the second stage of ordering to determine which is to be the first and the second of the two data output as the first half and to determine which is to be the third and the fourth of the two data output as the last half based on the value of a signal EZORG0 reflecting the value of the least significant bit in the externally applied column address.
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