Invention Grant
- Patent Title: Capacitor method and apparatus
- Patent Title (中): 电容器方法和装置
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Application No.: US10335144Application Date: 2002-12-30
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Publication No.: US06924970B2Publication Date: 2005-08-02
- Inventor: Behrooz Mehr , Juan Soto , Kevin Lenio , Nick Holmberg
- Applicant: Behrooz Mehr , Juan Soto , Kevin Lenio , Nick Holmberg
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01G2/20
- IPC: H01G2/20 ; H01G4/00 ; H01G4/228 ; H01G4/232 ; H01G4/248 ; H01G4/30

Abstract:
A method and apparatus is provided that pertains to a low inductance capacitor. The capacitor has a first surface electrically interconnected to a plurality of conductive electrodes and one or more second surfaces electrically interconnected to a plurality of electrodes interposed between the electrodes electrically interconnected to the first conductive surface. A dielectric layer separates the layered plurality of electrodes. The one or more second conductive surfaces are positioned within the body of the layered electrodes, such that the distance between the terminations of the first conductive surface and the one or more second conductive surfaces is shortened to lower inductance.
Public/Granted literature
- US20040125535A1 Capacitor method and apparatus Public/Granted day:2004-07-01
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