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US06936183B2 Etch process for etching microstructures 失效
用于蚀刻微结构的蚀刻工艺

Etch process for etching microstructures
Abstract:
A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
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