Invention Grant
- Patent Title: Etch process for etching microstructures
- Patent Title (中): 用于蚀刻微结构的蚀刻工艺
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Application No.: US10265598Application Date: 2002-10-08
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Publication No.: US06936183B2Publication Date: 2005-08-30
- Inventor: Jeffrey D. Chinn , Sofiane Soukane
- Applicant: Jeffrey D. Chinn , Sofiane Soukane
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser, Patterson & Sheridan, LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G02B6/12 ; G02B6/122 ; G02B6/36 ; C03C15/00

Abstract:
A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
Public/Granted literature
- US20030071015A1 Etch process for etching microstructures Public/Granted day:2003-04-17
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