Invention Grant
- Patent Title: Four-phase dual pumping circuit
- Patent Title (中): 四相双泵电路
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Application No.: US10707786Application Date: 2004-01-12
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Publication No.: US06952129B2Publication Date: 2005-10-04
- Inventor: Hong-chin Lin , Ming-Chih Hsieh , Jain-Hao Lu , Chien-Hung Ho
- Applicant: Hong-chin Lin , Ming-Chih Hsieh , Jain-Hao Lu , Chien-Hung Ho
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02 ; H02M3/07

Abstract:
A four-phase dual pumping circuit has a number of stages according to the required output voltage based on an input voltage. Each stage has a first pumping unit and a second pumping unit that are mirror and identical to each other and electrically coupled to each other. The dual pumping circuit is controlled by four-phase clocks which are made from one pair of out of phase clocks. The transistors of the dual pumping circuit have special substrate connection to minimize body effects. The four-phase dual pumping circuit uses NMOSFETS for negative pumping and PMOSFETS for positive pumping.
Public/Granted literature
- US20050151580A1 FOUR-PHASE DUAL PUMPING CIRCUIT Public/Granted day:2005-07-14
Information query
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