Invention Grant
- Patent Title: Partially etched dielectric film with conductive features
- Patent Title (中): 具有导电特性的部分蚀刻介质膜
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Application No.: US10791966Application Date: 2004-03-03
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Publication No.: US07012017B2Publication Date: 2006-03-14
- Inventor: Dennis M. Brunner , David L. Buster , Michael S. Graff , Daniel K. Luebbert , Nathan P. Kreutter , Rui Yang , Guoping Mao
- Applicant: Dennis M. Brunner , David L. Buster , Michael S. Graff , Daniel K. Luebbert , Nathan P. Kreutter , Rui Yang , Guoping Mao
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN St. Paul
- Agent Melanie G. Gover
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/302
Abstract:
Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.
Public/Granted literature
- US20050167829A1 Partially etched dielectric film with conductive features Public/Granted day:2005-08-04
Information query
IPC分类:
