Invention Grant
- Patent Title: Semiconductor sensor with pressure difference adjusting means
- Patent Title (中): 具有压差调节装置的半导体传感器
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Application No.: US10809343Application Date: 2004-03-26
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Publication No.: US07095064B2Publication Date: 2006-08-22
- Inventor: Kazuaki Hamamoto
- Applicant: Kazuaki Hamamoto
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2003-096376 20030331
- Main IPC: H01L29/82
- IPC: H01L29/82

Abstract:
In a semiconductor sensor having a membrane structure, the destruction of the membrane caused by the expansion or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented. A semiconductor sensor 10 comprising a substrate 30 and a membrane 20 formed on the top surface thereof, in which the bottom of the substrate 30 and a mounting surface 50 on which the sensor 10 is mounted are bonded, has pressure difference adjusting means 22a to 22c for eliminating the difference in pressure of a fluid between an inside and an outside of a hollow part 34 while the sensor is in use.
Public/Granted literature
- US20040188784A1 Semiconductor sensor with pressure difference adjusting means Public/Granted day:2004-09-30
Information query
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