Invention Grant
- Patent Title: Triode structure of field emission display and fabrication method thereof
- Patent Title (中): 场发射显示的三极结构及其制造方法
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Application No.: US11109173Application Date: 2005-04-19
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Publication No.: US07156715B2Publication Date: 2007-01-02
- Inventor: Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
- Applicant: Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Quintero Law Office
- Priority: TW91135059A 20021203
- Main IPC: H01J9/12
- IPC: H01J9/12
Abstract:
A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
Public/Granted literature
- US20050197032A1 Triode structure of field emission display and fabrication method thereof Public/Granted day:2005-09-08
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