Invention Grant
- Patent Title: Methods of and apparatus for making high aspect ratio microelectromechanical structures
- Patent Title (中): 制备高纵横比微机电结构的方法和装置
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Application No.: US10272255Application Date: 2002-10-15
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Publication No.: US07163614B2Publication Date: 2007-01-16
- Inventor: Adam L. Cohen
- Applicant: Adam L. Cohen
- Applicant Address: US CA Van Nuys
- Assignee: University of Southern California
- Current Assignee: University of Southern California
- Current Assignee Address: US CA Van Nuys
- Agent Dennis R. Smalley
- Main IPC: C25D5/02
- IPC: C25D5/02 ; C25D5/00

Abstract:
Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.
Public/Granted literature
- US20030121791A1 Methods of and apparatus for making high aspect ratio microelectromechanical structures Public/Granted day:2003-07-03
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